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吴曙东
发布日期:2014-10-25浏览次数:字号:[ ]

 

联系方式:

    电话: 15050710357

    邮箱: sdwu@yzu.edu.cn

    地址:扬州市四望亭路180号,扬州大学物理科学与技术学院,225002

    办公地点:物理楼210室

一、导师简历:

    1.教育经历

    2002.9-2005.6 中国科学院物理研究所, 获凝聚态物理专业博士学位

    1999.9-2002.6 华中科技大学物理系, 获光学专业硕士学位

    1995.9-1999.6 湖北师范学院物理系,获物理教育专业理学学士学位

    2. 工作经历

    2010.8-至今扬州大学物理科学与技术学院

    2006.52008.5 日本大阪大学电子工程系JSPS 博士后

    3. 兼任主要社会职务:

 

二、研究领域:

    1、研究方向:

    (1)半导体低维结构的物理特性计算

    (2)半导体自旋电子学

    2、研究内容

  (1)研究半导体纳米结构中激子和双激子效应,通过量子调控将双激子态调回到简并态从而实现纠缠光子对。

    (2)研究半导体纳米结构中自旋和量子比特。

    3、科研项目

  江苏省高校自然科学研究面上项目:InAs/GaAs量子点自旋动力学与自旋调控的理论研究

  国家级大学生创新创业训练计划资助项目:GaN/InGaN太阳能电池性能的研究

三、研究成果

    1、专利技术

    2、获奖

  获2012-2013年度扬州大学最受学生欢迎的任课教师

  获2012-2013年度扬州大学最受学生欢迎的班主任

  获2003年湖北省优秀硕士学位论文奖

    3、发表的主要论文

  [1] Shudong Wu*, Lichun Wang, Huoquan Li, and Xianghua Zeng, Tuning of the intersubband absorption in a shallow InAs/InP quantum wire by a transverse electric field, Superlattices and Microstructures 67, 33 (2014).

  [2] Shudong Wu* and Weiwei Xia, Exciton polarizability and absorption spectra in CdSe/ZnS nanocrystal quantum dots in electric fields, J. Appl. Phys. 114, 043709 (2013).

  [3] Shudong Wu* and Stanko Tomić, Exciton states and oscillator strengths in a cylindrical quantum wire with finite potential under transverse electric field, J. Appl. Phys. 112, 033715 (2012).

  [4] Shudong Wu* and Li Wan, Electronic structures in a CdSe spherical quantum dot in a magnetic field: Diagonalization method and variational method, J. Appl. Phys. 111, 063711 (2012).

  [5] Shudong Wu*and Li Wan, Exciton states and excitonic absorption spectra in a cylindrical quantum wire under transverse electric field, Eur. Phys. J. B. 85, 12 (2012).

  [6] Shudong Wu* and Li Wan, Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers, J. Appl. Phys. 110, 123109 (2011).

  [7] Shudong Wu*, Exciton binding energy and excitonic absorption spectra in a parabolic quantum wire under transverse electric field, Physica B 406, 4634 (2011).

  [8] Shudong Wu*, Yongge Cao, Stanko Tomić, and Fumitaro Ishikawa, The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers, J. Appl. Phys. 107, 013107 (2010).

  [9] Shudong Wu, Zhi Huang, Yuan Liu, Qiufeng Huang, Wang Guo, Yongge Cao, The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells, Physica E 41, 1656 (2009) .

  [10] Shudong Wu, Zhi Huang, Yuan Liu, Qiufeng Huang, Wang Guo, Yongge Cao, The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells, Superlattices and Microstructures 46, 618 (2009).

  [11] Shudong Wu*, M.Kato, M.Uchiyama, K. Higashi, F. Ishikawa, and M. Kondow, N2 gas flow driven unintentional incorporation of Al during the growth of molecular beam epitaxy, Applied Physics Express 1, 035004 (2008).

  [12] Shudong Wu*, M.Kato, M.Uchiyama, K. Higashi, F. Ishikawa, and M. Kondow, Effect of the unintentional incorporation of Alduring the molecular beam epitaxial growth of GaInNAs quantum well. Phys. Stat. Sol. (C) 5, 2736 (2008).

  [13] Shudong Wu, W.X. Wang, L.W. Guo, Z.H. Li, X.Z. Shang, F. Liu, Q. Huang, and J.M. Zhou, Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy, Journal of Crystal Growth, 278, 548 (2005).

  [14] Shudong Wu, L.W. Guo, W.X. Wang, Z.H. Li, X.Z. Shang, H.Y. Hu, Q. Huang, J.M. Zhou, The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy, Journal of Crystal Growth, 270, 359 (2004).




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